Power devices on wide-bandgap semiconductors (SiC, GaN) are getting introduced into the market in power modules for energy conversion at high voltages and currents. Here, a key property ist he ability to use high switching speeds for the minimization of switching losses. Presently available power modules which are routinely used for silicon IGBTs are not readily applicable for this purpose. Thus, development of power modules also appears to be required besides the wide-bandgap device which imposes an additional barrier for market penetration.

This pilot project takes an innovative approach by introducing high-voltage capable silicon capacitors based on Fraunhofer IISB‘s own proprietary technology. These silicon devices are mounted directly in the module using the same assembly technology as the power devices. By using such an integrated RC-filter, it is possible to exploit the benefits of SiC and GaN devicers in available, already established and fully qualified power modules. The combination of low loss power semiconductor devices and silicon based capacitor technology in conventional module technologies will further push the commercializaton of high-efficient power converters.
Moreover, this pilot project is also enhancing the development of Aluminum Nitride (see picture) as next-generation wide-bandgap semiconductor device towards larger wafer diameters.