The objective of the project is to offer an open, flexible, and versatile technology and transfer platform for wide-bandgap – especially silicon carbide (SiC) – technologies. In this field, the LZE partner Fraunhofer IISB is featuring Europe-wide unique competencies and infrastructure.

The platform aims at providing the latest research results fast and straightforwardly, at a high TRL for sustainable utilization and as a comprehensive workbench for our customers, especially for small and medium enterprises. Thus, specialized wide-bandgap devices or SiC-based sensors, serving as key components with considerable leverage in globally competitive customer products in mobility, energy, or industry, can be realized as prototypes or small batches and be collaboratively developed in joint labs, test or demonstration environments.